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The Authors, the Editors Eberhard Koster was born in 1935 in Stuttgart, Germany. He received the DipJ. Phys. and Dr. degrees in physics from the University of Stuttgart in 1961 and 1966, In 1964 he became Research Scientist in Solid-State Physics at the University of Stuttgart. In 1966 he joined the Franklin Institute Research Laboratories, Philadelphia, Pa., as a Senior Research Scientist. His interest was concentrated on magnetization processes in single domain materials. Since 1967 he is a Member of the Technical Staff of the BASF AG in Ludwigshafen, Germany, where he is in change of the laboratory for magnetic recording materials and media. Heinz Billing was born in 1914 in Salzwedel, Germany. He studied physics and mathematics at the Universities of GOttingen and Munich, Germany, and received the Dr. rer. nat. degree in 1938. After the doctoral thesis, he joined Aerodynamische Versuchsanstalt, Gottingen. He developed magnetic drum memory in 1948. Starting in 1950, he was engaged in the development and construction of electronic computers G 1, G2, G3 in Gottingen and Munich. In 1949/50 he worked at the University of Sidney, Australia, and in 1956 at the Institute for Advanced Studies, Princeton, USA. Since 1961, he is a Scientific Member of Max-Planck-Institut fiir Physik und Astrophysik, Munich. In 1967 he became Honorary Professor at the University of Erlangen. Peter Wentzel was born in 1932 in Baden-Baden, Germany. From 1953 to 1957 he studied communications at the Technical University of Munich, Germany, where he received the DipJ.-Ing. degree. Subsequently, he developed electronic controls for adjusting the velocity of rolling freight cars in shunting yards for the AEG-Telefunken Company in Konstanz, Germany. In 1960 he joined the Central Communications Laboratory of the Siemens AG, where he worked on traffic signal equipment, electronic relays, magnetic core memories, and finally on disk files. Currently, he manages the development of disk file drive and control units in the Data and Information Systems Division of Siemens AG. Klaus Winkler was born in 1936 in Munich, Germany. For one year, he was a trainee at Rhode & Schwarz, Munich. He studied high-frequency technique at the Technical University of Munich, where he received the Dip!.-Ing. degree. From 1961 to 1963 he was engaged in the development of suppressed carrier modulators at LM Ericsson, Darmstadt. In 1963 he joined the Siemens AG, Munich, working on the development of tape drives for data processing, since 1968 as leader of this group. Eckart Lennemann was born in 1938 in Bochum, Germany. He received the DipJ.-Ing and the Ph. D. degrees in mechanical engineering from the Technical University of Aachen, Germany, and the University of Waterloo, Ontario, Canada, in 1965 and 1969, 417

In 1970 he joined the IBM Laboratories, Boeblingen, Germany, working on the development of direct access disk storage devices. In 1973 he became Manager of the Mechanical Analysis Department in the High Speed Printer Development group. Since 1976 he has been Manager in the System Product Assurance group, where he is responsible for attachments of input/output devices. Albrecht Moeller was born in 1926 in Darmstadt, Germany. He received the Dipl.-Chem. and the Dr. rer. nat degrees in physical chemistry from the Technische Hochschule Darmstadt in 1954 and 1958, Until 1959 he was with the Technische Hochschule Darmstadt, where he was working in the field of magnetic susceptibility of alloys. Since 1959 he has been with the Research Institute of the German Post Office, Darmstadt, Germany, where he was working in the field of semiconductor technology (heteroepitaxy, MNOS structures) until 1975; he is now engaged in the research on reliability of semiconductor circuits. Rudolf W. Mitterer was born in 1928 in Munich, Germany, He received the Dipl.-Ing. degree from the Technische Hochschule Munich in 1954. In the same year, he joined the Central Laboratory of the Siemens AG, Munich. He has been engaged in the development of digital measurement equipment, core memories, and disc memories. Since 1970 he has been responsible for the development of semiconductor memories, first in the computer division and since 1976 in the components group. Utz G. Baitinger was born 1938 in Stuttgart/Germany. He received the Dipl.-Ing. and the Dr. Ing. degrees in electronic engineering from the Technical University of Stuttgart in 1963 and 1968, In 1963 he was employed with the Compagnie Francaise Thomson-Houston, Paris, France. From 1963 to 1968 he was employed as Scientific Assistant to Prof. Dosse, Head of the Department of Semiconductor Technologies, University of Stuttgart, where he was engaged in semiconductor physics. In 1968 he joined the Memory Circuit Development Department of the IBM Laboratories, Boeblingen, Germany, working on digital integrated-circuit designs for monolithic memory applications. From April to August 1969 he was assigned to the IBM Components Division, Poughkeepsie, NY, USA, where he worked especially on monolithic FET memories. Back in the IBM Laboratories in Boeblingen, he participated in the development of large-scale integrated monolithic memory chips, and he is presently working in the Microprogramming Department there. In addition to that he lectures on Circuit Technologies at the University of Stuttgart. Dr. Baitinger is a member of the Nachrichtentechnische Gesellschaft (NTG). Rolf Remshardt was born in 1936 in Stuttgart, Germany. He received the Dipl.-Ing. and the Dr. Ing. degrees in electronic engineering from the Technical University of Stuttgart in 1964 and 1967, From 1964 to 1967 he worked for Prof. R. Feldtkeller, Head of the Institut fur Nachrichtentechnik at the University of Stuttgart. In 1967 he joined the Circuit Technology Department of the IBM Laboratories in Boeblingen, Germany. A few years later, he became Manager of the Memory Circuit Development Department. From May 1972 to December 1973 he was assigned 418

to the IBM Components Division in Burlington, VT, USA, where he worked especially on FET memories. He is presently working on bipolar logic chips with high density at the IBM Laboratories, Boeblingen. Dr. Remshardt is a member of the Nachrichtentechnische Gesellschaft (NTG). Karlheinrich Horninger was born in 1944 in Graz, Austria. He received the Dipl.-Ing and the Dr. techno degrees from the Technical University of Vienna, Austria, in 1970 and 1975, Since 1970 he has been with the Research Laboratories of Siemens AG, Munich, Germany, working first on MNOS memories for non-volatile information storage. Then he worked on circuits in ESFI-SOS technology and on CCDs. He is currently engaged in the area of highdensity MOS memories and MOS logic circuits. Dr. Horninger is a member of the Nachrichtentechnische Gesellschaft (NTG). He received the NTG Award in 1976. Wolfgang K. Liebmann was born in 1933 in Berlin, Germany. He received the Dipl.-Ing. and the Dr. Ing. degrees from the Technical University of Berlin in 1956 and 1958, Afterwards he was a "Postdoctorate Fellow" in the Department of Metallurgy of the University of Pennsylvania, and a member of technical staff, RCA Davis Sarnoff Research Center, Princeton, N. J., USA. In 1963 he joined IBM and since then was in quick changes entrusted with numerous tasks in Germany as well as in the USA, all in close context to monolithic stores. Since 1970 he was responsible for component product development in the IBM Laboratories, Boeblingen, Germany. In 1973 he became Manager of Boeblingen Component Development being responsible for the development of electronic components for logic and storage of small and medium sized IBM Data Processing systems. Since 1977 he has been Director of the Boeblingen IBM Laboratory. Hans Joachim Harloff was born in 1924 in Rostock, Germany. He received the Dipl. Phys. degree from the University of Kiel, Germany, in 1952. In 1953 he joined the Siemens AG, Central Laboratory, Munich, Germany, where he started working on telephone systems and computer circuitry. Since 1957 he has been working on data storage methods including magnetic and super conducting thin films, plated wires, and semiconductors. Currently, he is Manager of a laboratory group at the Data Processing Systems Division, working on semiconductor memory components and their application in memory hierarchy. Mr. Harloff is member of the Deutsche Physikalische Gesellschaft and the Verband Deutscher Elektrotechniker. Claus Schiinemann was born in 1931 in Liineburg, Germany. He received the Dipl.-Ing. and the Dr. Ing. degrees in electrical engineering from the Technical University Darmstadt, Germany, in 1955 and 1965, After having worked from 1955 to 1963 with the AEG company on electrical machines and electronics, he joined the IBM Development Laboratory in Boeblingen, Germany, working in the areas of computer testing, logic design, LSI memories and processors. From 1970 to 1973 419

he was Manager of Advanced Development Systems. From 1974 to 1975 he was assigned to the IBM Research Division working on Josephson technology. Presently, Dr. Schiinemann is with the Advanced Technology staff in the Boeblingen Laboratory and primarily interested in storage and computer systems. Jurgen Scharbert was born in 1933 in Berlin, Germany. He studied physics at the Freie Universitiit, Berlin, and received the Dip!. Phys. degree in 1959. He joined the Central Laboratory of the Siemens AG, Munich in 1959, where he first was involved in high speed memory core applications, and in the development of core memories and magnetic read-<>nly memories. Since 1971 he is engaged in the development of semiconductor microprogram memory systems. He also works in the fields of electrical design for fast bipolar PROMs and development of test procedures for bipolar PROM and RAM devices. Rudolf G. Muller was born in 1940 in Munich, Germany. He received the Dip!. Phys. and the Dr. rer. nat. degrees from the Technical University, Munich, in 1965 and 1971, From 1966 to 1972 he worked at the Technical University, Munich, on government research projects in solid-state technology and was especially involved in research work on energy direct conversion, amorphous oxides, and amorphous and poly crystalline silicon. In 1972 he joined Siemens AG, Munich, working in the Central Telecommunication Laboratories on non-volatile memory principles. Frans H. de Leeuw was born in 1938 in Nijmegen, The Netherlands. He received the Ph. D. degree from the Catholic University of Nijmegen in 1971. He spent four years as a Research Assistant with the Atomic and Molecular Research group of the University of Nijmegen and was involved in research on the electric and magnetic properties of molecules by means of high resolution molecular beam spectroscopy. In 1971 he joined Philips Research Laboratories, Eindhoven, The Netherlands, where he is investigating the dynamics of wall motion in magnetic materials. Dr. de Leeuw is a member of the Netherlands Physical Society and the European Physical Society. Werner Metzdorf was born in 1931 in Berlin, Germany. He studied physics and mathematics at the University of Munich, Germany, where he received the Dip\. Phys. degree in 1955. From 1955 to 1976 he was working with the Advanced Development Department of Siemens AG, Components Division, Munich. There he was especially engaged in the development of magnetic memory elements as e.g. ferrite cores, planar and cylindrical thin magnetic films and magnetic bubbles. From 1971 to 1976 he was the manager of the bubble project. Since 1977 he has been working with the Research Laboratory of the Siemens AG, Munich. Mr. Metzdorf is a member of the IEEE. 420

Hermann Deichelmann was born in 1938 in Lauterbach, Germany. He studied physics at the Frankfurt University, Germany, and received the Dipl. Phys. degree. Mterwards he was engaged in development work with Pfaudler AG, Schwetzingen, Germany. There he worked on the mechanism of solids and devoted his attention to glass-like substances. 1n 1963 he was awarded the degree of Dr. Ing. for a thesis on this subject under Prof. Hennicke at the Technical University, Oausthal, Germany. In 1971 he joined BASF AG, Ludwigshafen, Germany, where he has been engaged in the development of new types of data storage devices. Peter Wolf was born in 1930 in Konstanz, Germany. He received a B. S. degree in physics from the University of Karlsruhe in 1953, a Dipl. Phys. degree from the University of Darmstadt in 1958, and the Dr. rer. nat. degree from the University of Mainz in 1963. In 1959 he joined the IBM Research Laboratory, Riischlikon, Switzerland, and has worked on spin dynamics in thin magnetic films, on the dynamics of spin structures in rare-earth metals, and on microwave Schottky barrier field effect transistors (MESFETs). At present, he is manager of a devices group, and since 1971 engaged in investigations on Josephson junctions. Dr. Wolf is a member of the German Physical Society. Eckhard Kratzig was born in 1939 in Gleiwitz, Germany. He received the Dipl. Phys. and the Dr. phil. nat. degrees from the Johann Wolfgang Goethe-University of Frankfurt, Germany, in 1964 and 1969, In 1969 he joined the Philips Forschungslaboratorium Hamburg, Germany, and worked on acoustic surface waves, superconducting films, and electro-optic storage materials. Since 1973 he has been Manager of the Solid State Physics group of the Philips Forschungslaboratorium Hamburg. Bernhard Hill was born in 1938 in Bad Kreuznach, Germany. He received the Dipl.-Ing. and the Dr. Ing. degrees in electronic engineering from the Technical University of Aachen, Germany, in 1965 and 1968, In 1969 he joined the Philips Forschungslaboratorium Hamburg, Germany, and worked on electro-optic components and systems, as e. g. optical multiplex systems, optical stores and displays. At present, he is Manager of the Optics Research group. Wolfgang Hilberg was born in 1932 in Gie~en, Germany. He studied communications technology at the Technical University of Darmstadt, Germany, and received the Dipl. Ing. degree in 1957. In 1958 he commenced work in the Research Institute of Telefunken in Uim, Germany, and participated in the development of special purpose computer and measuring units. In 1963 he received the Dr.-Ing. degree. He remained with Telefunken until 1971 and concentrated on various research projects in the field of data processing and digital storing units, in particular in connection with the development of novel memories. He wrote numerous papers about memories, digital circuits, and problems of RF and pulse technology. 421

Since 1972 he has been Professor for Digital Circuits and Memories at the Technical University of Darmstadt and has lectured on electronics and data technology. Dr. Hilberg is a member of the Nachrichtentechnische Gesellschaft (NTG) and a Senior Member of IEEE. Dieter Fischer was born in 1940 in Pforzheim, Germany. He studied electrical engineering, specializing in communication techniques at the Technical University of Karlsruhe, Germany, and received the Dipl.-Ing. degree in 1965. Afterwards he joined the Central Laboratory of Standard Elektrik Lorenz AG, Stuttgart, Germany, developing "house-keeping-systems" for satellites. After taking over the responsibility for the Components Laboratory, the main activities were in development of multi-chip techniques, investigation and specification of integrated circuits, failure analysis of semiconductor components, and development of customized LSI circuits. Since winter 1970/1971 he has been a lecturer in Microelectronics at the Technical College in Heilbronn, Germany. Hans-Jorg Penzel was born in 1935 in Leipzig, Germany. He received the Dip!. Ing. degree in electrical engineering from the Technical University of Hannover, Germany, in 1962. Afterwards he joined Siemens AG, Munich, Germany, where he has been engaged in design and development of memory systems in different technologies. Presently, he is Manager of a laboratory group, responsible for development of MOS and bipolar semiconductor memory systems for computer application. Hans-Otto Leilich was born in 1925 in Nauen, Germany. He received the Dipl.-Ing. and the Dr. Ing. degrees in electrical engineering from the Technical University of Munich, Germany, in 1952 and 1956, From 1952 to 1956 he participated in the design and development of PERM (programmable electronic computer, Munich). In 1956 he joined Telefunken in Backnang, Germany, working on the development of the computer TR4. From 1962 to 1968 he was an advisory engineer with IBM Development Laboratory, Poughkeepsie, N. Y., working on core and magnetic film memories. Since 1968 he has been Professor and Director of the Institut fiir Datenverarbeitungsanlagen at the Technical University of Braunschweig, Germany. Walter Motsch was born in 1944 in Speyer, Germany. He received the Dipl.-Ing. degree in electrical engineering from the Technische Hochschule Darmstadt, Germany, in 1971. For two years, he was engaged in the development of semiconductor memory systems with the Philips Electrologica Corporation in Siegen, Germany. In 1973 he joined the University of Kaiserslautern, and since 1974 he has been employed as a Scientific Assistant with the Ruhr-University of Bochum. Presently, he is working on computer architecture and memory technology. 422

Wilhelm G. Spruth was born in 1929 in Herne, Germany. He received the Dipl.-Ing. and the Dr.-Ing. degrees in electrical engineering from the Technical University of Aachen, Germany, in 1954 and 1957, In 1959 he joined IBM and has been involved with the development of new computer systems and I/e> devices. Pre senti}'., he is Manager of the Advanced Technology Department. Dr. Spruth is a member of the Association for Computing Machinery and the Institute of Electrical and Electronic Engineers IEEE. Axel Lehmann was born in 1946 in Mannheim, Germany. He studied electrical engineering and information processing at the University of Karlsruhe, Germany, and received the Dipl.-Ing. degree in 1972. Since 1973 he has been a candidate for a doctor's degree and an assistant of Prof. Dr. D. Schmid at the Institut fur Informatik IV, University of Karlsruhe. The field of research are organization and management of memory systems, and hardware realization of operating system functions. Detle! Schmid was born in 1934 in Worms, Germany. He studied electrical engineering and information processing at the Universities of Mannheim and Karlsruhe, Germany, and received the Dipl.-Ing. and the Dr.-Ing. degrees in 1963 and 1968, After research worle in industry and university, he became full professor for Informatik at the University of Karlsruhe in 1972. He is leader of a research group in computer organization. Walter E. Proebster was born in 1928 in Mannheim, Germany. He studied electrical engineering at the Technical University of Munich, Germany, where he received the Dipl.-Ing. and the Dr.-Ing. degrees in 1951 and 1956, From 1951 to 1956 he participated in the design and development of the computer PERM at the Technical University of Munich, Germany. In 1956 he joined the IBM Research Laboratory, Zurich, Switzerland, where he worked on computer components, amongst them thin magnetic films. From 1962 to 1964 he held the position of Director of Experimental Machines at the IBM T. J. Watson Research center at Yorktown Heights, USA and conducted research in the fields of Advances Logic, Memory and Systems. From 1964 to 1973 he directed the IBM Development Laboratory at B6blingen, Germany. His current assignment with IBM is as Director for Research and Development Coordination, B6blingen, Germany. He is a member of the Nachrichtentechnische Gesellschaft (NTG), Germany, and of IEEE. In 1977 he was nominated as Fellow of IEEE. He lectures at the Technical University Karlsruhe, Germany on Digital Memory and Storage and Input/Output. In 1972 he became Honorary Professor at this University. 423